'j.ziie.u ^>mi-donauctoi ij-^ioaucti, ljna. 2 0 ster n ave . telephone : (973 ) 376-292 2 springfield , ne w jerse y 0708 1 (212 ) 227-600 5 u s.a . fax : ( 97 3 ) 376-896 0 2n326 5 absolut e maximu m rating s a t 25 c cas e temperatur e (unles s otherwis e noted ) 2n326 5 ^collector-emitte r voltag e (vb e = -1. 5 v , se e not e 1 ) 150 v 'collector-emitte r voltag e (bas e open , se e not e 1 ) 90 v 'emitter-bas e voltag e - ? 7 v 'continuou s collecto r curren t ? * 2 5 a 'continuou s bas e curren t ?* 1 0 a saf e operatin g are a a t specifie d temperature s ? ? se e figure s 6 an d 7 - "continuou s devic e dissipatio n a t (o r below ) 75 c cas e temperatur e (se e not e 2 ) 12 5 w . 'continuou s devic e dissipatio n a t 100 c cas e temperatur e (se e not e 2 ) 10 0 w continuou s devic e dissipatio n a t (o r below ) 25 c free-ai r temperatur e (se e not e 3 ) 4 v v *unclampe d inductiv e loa d energ y (se e not e 4 ) ? ? 2 m j operatin g collecto r junctio n temperatur e rang e ?? 65 c t o 200 c 'storag e temperatur e rang e ? 65 c t o 200 c lea d o r termina l temperatur e 1/ 8 inc h fro m cas e fo r 1 0 second s ... . ? * 260 c otes : 1 . thes e value s appl y onl y whe n the collector-emitte r voltag e i s applie d wit h the transisto r in the off-stat e wit h the base-emitte r diod e reverse-biase d or open-circuited , as specified . in operation , the limitation s of figure 6 or 7, as applicable , mus t be observed . 2. for operatio n abov e 75 c cas e temperature , refe r to dissipatio n deratin g curve , figur e 8. 3 . fo r operatio n abov e 25 c free-ai r temperatur e refe r t o dissipatio n deratin g curve , figur e 9 . 4 . thi s ratin g i s base d o n th e capabilit y o f th e transisto r t o operat e safel y i n th e circui t o f figur e 6 . l = 4 0 /jh , rab 2 = 2 0 ^ . v bb 2 = 6 v , r s = 0. 1 fl, v c c = 2 0 v . energ y ? l c2 l/2 . e c registere d data . thi s dat a shee t contain s al l applicabl e registere d dat a i n effec t a t th e tim e o f publication . n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d to.b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however , n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
'electrica l characteristic s a t 25 c cas e temperatur e (unles s otherwis e noted ) paramete r collector-emitte r v (br)ce o breakd0w n voltag e 'ce v collecto r cutof f curren t 'eb o emitte r cutof f curren t stati c forward curren t hp c transfe r rati o vg g base-emitte r voltag e v ce(sat ) collector-emitte r saturatio n voltag e ? , small-signa l common-emitte r jhf p forwar d curren t transfe r rati o tes t condition s | q = 200ma , i b = 0 , se e not e 5 v c e = 120v , v b e = -1.5 v vc e = 150v , v b e =-1.5 v v c e = 120v , v b e = -1.5v . t c =125 c v c e = 150v , vb e = -1-5v , tc=125 c v e b = 7v , i c = o v c e = 3v , i c =15a , se e note s 5 an d 6 v c e = 2v . 'c =15a . se e note s 5 an d 6 i b = 2 a , i c =20a , se e note s 5 an d 6 i b = 2 a , i c = 20a , se e note s 5 an d 6 v c e = 10v , i c = 3a , f = 5mh z 2n326 5 mi n ma x 9 0 2 0 2 0 5 2 0 5 5 1. 8 1 4 uni t v m a m a v v "switchin g characteristic s a t 25 c cas e temperatur e paramete r t r ris e tim e t s storag e tim e t f fal l tim e t o n turn-o n tim e tof f turn-of f tim e test conditions * l o - 1 r a in / 1 1 - 1 9 a imoi 19 a 2n326 5 ma x 0. 5 1. 5 0. 5 0. 5 2 uni t m s ^voltag e an d curren t value s show n ar e nominal ; exac t value s var y slightl y wit h transisto r parameters. ?jede c registere d dat a downloaded from: http:///
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